cystech electronics corp. spec. no. : c663e3 issued date : 2012.02.13 revised date : page no. : 1/6 BTC3149E3 cystek product specification high voltage npn triple di ffused planar transistor BTC3149E3 features ? high voltage, bv cbo =1600v min., bv ceo =800v min. ? pb-free lead plating package symbol outline BTC3149E3 to-220 c collector e emitter b base absolute maximum ratings (ta=25 c) parameter b c e symbol limit unit collector-base voltage v cbo 1600 v collector-emitter voltage v ceo 800 v emitter-base voltage v ebo 6 v i c (dc) 1.2 a collector current i c (pulse) 3 *1 a p d (ta=25 ) 2 power dissipation p d (tc=25 ) 40 w operating junction and storage temp erature range tj ; tstg -55~+150 c note : *1. single pulse pw 3 Q 00 s,duty 2% Q .
cystech electronics corp. spec. no. : c663e3 issued date : 2012.02.13 revised date : page no. : 2/6 BTC3149E3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 1600 - - v i c =100 a, i e =0 bv ceo 800 - - v i c =1ma, i b =0 bv ebo 6 - - v i e =100 a, i c =0 i cbo - - 10 a v cb =1600v, i e =0 i ceo - - 10 a v cb =800v, i b =0 i ebo - - 100 na v eb =6v, i c =0 *v ce(sat) - - 0.2 v i c =200ma, i b =40ma *v ce(sat) - - 0.35 v i c =500ma, i b =100ma *v be(sat) - - 1.2 v i c =500ma, i b =100ma *h fe 1 20 - - - v ce =5v, i c =10ma *h fe 2 24 - 35 - v ce =5v, i c =100ma *h fe 3 5 - - - v ce =5v, i c =500ma cob - 10 - pf v cb =10v, f=1mhz tr - - 0.8 tstg - - 3 tf - - 0.4 s v cc =400v, i c =0.5a, i b 1=0.1a i b 2=-0.2a *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping BTC3149E3 to-220 (rohs compliant package) 50 pcs / tube , 40 tubes/box
cystech electronics corp. spec. no. : c663e3 issued date : 2012.02.13 revised date : page no. : 3/6 BTC3149E3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5ma 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2m a 4ma 6ma 8m a 10ma 20ma emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 15ma 20ma 50m a current gain vs collector current 1 10 100 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=5ib
cystech electronics corp. spec. no. : c663e3 issued date : 2012.02.13 revised date : page no. : 4/6 BTC3149E3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=5ib capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob onn voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon @ vce=5v power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) power derating curve 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 case temperature---tc() power dissipation---pd(w)
cystech electronics corp. spec. no. : c663e3 issued date : 2012.02.13 revised date : page no. : 5/6 BTC3149E3 cystek product specification recommended wave soldering condition peak temperature soldering time product pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. 6 minutes max. 8 minutes max. time 25 c to peak temperature note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c663e3 issued date : 2012.02.13 revised date : page no. : 6/6 BTC3149E3 cystek product specification to-220 dimension *: typical inches millimeters inches millimeters marking: a b e g i k m o p 3 2 1 c n h d 4 style: pin 1.base 2.collector 3.emitter 4.collector 3-lead to-220 plastic package cystek package code: e3 date code dim min. max. min. max. dim min. max. min. max. a 0.2197 0.2949 5.58 7.49 i - * 0.1508 - * 3.83 b 0.3299 0.3504 8.38 8.90 k 0.0295 0.0374 0.75 0.95 c 0.1732 0.185 4.40 4.70 m 0.0449 0.0551 1.14 1.40 d 0.0453 0.0547 1.15 1.39 n - * 0.1000 - * 2.54 e 0.0138 0.0236 0.35 0.60 o 0.5000 0.5618 12.70 14.27 g 0.3803 0.4047 9.66 10.28 p 0.5701 0.6248 14.48 15.87 h - * 0.6398 - * 16.25 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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